Representation of the boundary of crystals and determination of intergranular surface conductivities in polycrystalline semiconductors
Abstract
Recently, the scale of the use of polycrystalline semiconductor thin films with grain sizes of the order of ten nanometers has increased. This is due to the variety of their functional properties. One of the peculiar features of polycrystalline semiconductors is the presence in them of built-in interfaces-grain boundaries, which have a decisive effect on the electrical properties of polycrystals. In this work, the structures of some polycrystalline objects have been studied. The ordered arrangement of the structure of polycrystalline thin layers is shown under optimization of condensation conditions. The boundaries of flat crystallites are considered and intergranular surface conductivities are determined for heterogeneous materials from bismuth and antimony tellurides, and the dependence of the change in surface conductivity on the surface potential is found. Taking into account the values of changes in surface conductivity for high-conductivity and low-conductivity phases of a heterogeneous system of bismuth and antimony tellurides, the values of intergranular surface conductivities are found for a highly conductive phase-from p-type bismuth telluride and p-type antimony telluride, and for a low-conductive phase-from p-type antimony telluride. Thus, by studying the dependence of the change in the conductivity of a heterogeneous material on the surface potential, one can determine the change in the surface charge and obtain data on surface states.