Morphological and structural properties of antimony selenide thin films deposited with external electric field assistance
A. OlimovInstitute of Ion-Plasma and Laser TechnologiesT.M. RazykovPhysical-Technical Institute, Uzbekistan Academy of SciencesК. M. KuchkarovPhysical-Technical Institute, Uzbekistan Academy of SciencesM. A. MakhmudovPhysical-Technical Institute, Uzbekistan Academy of SciencesА. Х. ШукуровInstitute of Ion-Plasma and Laser Technologies of Uzbek Academy of SciencesUrol Kudratovich MakhmanovMirzo Ulugbek National University of Uzbekistan
ABI
Abstract
A method for producing a thin semiconductor film of antimony selenide (Sb2Se3) via vacuum thermal evaporation with the assistance of an electric field was presented. The morphological, elemental and structural properties of the thin films were characterized using X-ray diffraction and scanning electron microscopy (with energy dispersive X-ray spectroscopy). It was found that an applied constant electric field plays an important role in obtaining Sb2Se3 thin films with the desired morphological and structural properties. The latter is a useful tool for controlling charge transport properties in thin films.
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