Investigation of electrical and optoelectrical efficiency in the fabricated two-dimensional MoTe2 field-effect transistor
Kamoladdin SaidovInstitute of Material Science, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKhojiakbar FoziljonovTashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, UzbekistanShodiyor KholmonovTashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, UzbekistanF. ShayimovTashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, Uzbekistan
ABI
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