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A Composite Interlayer Enabling Simultaneous Performance Enhancement in Quantum Dot Solar Cells and Photodetectors <sup>†</sup>

Youdi ZhangKey Laboratory of Advanced Green Functional Materials, College of Chemistry Changchun Normal University Changchun Jilin 130032 ChinaPai PengKey Laboratory of Advanced Green Functional Materials, College of Chemistry Changchun Normal University Changchun Jilin 130032 ChinaYang XuKey Laboratory of Advanced Green Functional Materials, College of Chemistry Changchun Normal University Changchun Jilin 130032 ChinaJingjing WangSchool of Materials Science &amp; Engineering Tianjin University Tianjin 300350 ChinaBiao XiaoKey Laboratory of Optoelectronic Chemical Materials and Devices (Ministry of Education), School of Optoelectronic Materials and Technology Jianghan University Wuhan Hubei 430056 ChinaVakhobjon KuvondikovInstitute of Ion‐Plasma and Laser Technologies, Uzbekistan Academy of Sciences Tashkent 100125 UzbekistanSherzod NematovKarshi State Technical University 225 Mustakillik, Karshi 180100 UzbekistanLong YeSchool of Materials Science &amp; Engineering Tianjin University Tianjin 300350 ChinaJunwei LiuDepartment of Building Environment and Energy Engineering, International Centre of Urban Energy Nexus The Hong Kong Polytechnic University Kowloon Hong Kong, China
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Abstract

Comprehensive Summary Quantum dots (QDs) have attracted significant attention in devices such as solar cells and photodetectors. Although polymer‐based hole transport layers (HTLs) have been employed in QD devices, their mechanical flexibility remains underexplored and insufficient for wearable applications. Here, we present a novel interlayer design for PbS QD solar cells and photodetectors by incorporating a low‐cost thermoplastic elastomer, SEBS (styrene‐ethylene‐butylene‐styrene), into the polymer HTL. The addition of 10 wt% SEBS promotes a more ordered molecular packing of PM6. As a result, PbS QD solar cells achieved a power conversion efficiency of 11.43%, while the corresponding photodetectors exhibited a high specific detectivity of 2.12 × 10 13 Jones—among the highest reported values. Beyond performance improvements, SEBS significantly enhances the mechanical flexibility of the HTLs. This work presents a new and effective strategy for simultaneously optimizing the optoelectronic performance and mechanical robustness of QD‐based devices.

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