Third‐Order Nonlinear Optical Modulation in MoS<sub>2</sub> Nanosheets in the Presence of CdSe and CdSe/V<sub>2</sub>O<sub>5</sub> Quantum Dots
Abstract
Abstract Embedding semiconductor quantum dots (QDs) into a 2D transition metal dichalcogenide (TMDCs) can significantly modulate the electronic charge transfer and, hence, the nonlinear optical (NLO) properties of the TMDCs. However, the influence of strong interactions within 2D nanostructure‐QDs composites on their third‐order NLO responses has not been explored thus far. The third‐order NLO characteristics of few‐layered MoS 2 nanosheets embedded with CdSe and CdSe/V 2 O 5 QDs are studied using 35‐fs pulses at 400 and 800 nm excitations. It is observed that an alteration of the third‐order NLO properties in MoS 2 occurs in the presence of QDs. Notably, the MoS 2 ‐QDs hybrid system exhibits a significant modulation in third‐order nonlinearities, with a substantial multi‐fold increase in the figure of merit in the presence of core CdSe QDs and suppression with passivated CdSe/V 2 O 5 QDs. These findings strongly indicate that QD‐based hybrid systems with charge transfer channels probably enhance carrier mobility and enable tunable electron transfer dynamics, which can emerge as a viable strategy for tailoring third‐order NLO properties in TMDCs, positioning these hybrid materials as promising candidates for optoelectronic applications.