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Electrophysical Characterization of Photodetectors Based on Semiconductor Structures Si (Li) and Si(Au)

Ilhom I. MaripovTashkent State Agrarian University, Tashkent Region, UzbekistanSali A. RadzhapovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Tashkent, UzbekistanSardor F. XasanovTashkent State Agrarian University, Tashkent Region, UzbekistanDamir B. IstamovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Tashkent, UzbekistanYusuf T. YuldashevTashkent State Agrarian University, Tashkent Region, UzbekistanDiyora AxnazarovaGulistan State University, Gulistan, UzbekistanShamshiddin A. AshirovGulistan State University, Gulistan, Uzbekistan
East European Journal of Physicsjournal2025uk
ABI

Abstract

This paper explores the technological and physical principles for developing silicon-lithium (Si(Li)) nuclear radiation detectors with a thickness greater than 1.5 mm and a surface area of at least The formation of large-area p–i–n structures through lithium ion drift and diffusion mechanisms was analyzed. To evaluate the electrophysical parameters of the detectors, current-voltage (I–V) and capacitance-voltage (C–V) characteristics were measured. The I–V results under reverse bias in the range of showed extremely low leakage currents indicating the formation of high-quality junctions. Beyond 100 V, the current remained nearly constant, forming a plateau region. The findings propose effective technological solutions for the development of highly sensitive, stable, and low-noise radiation detectors.

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Topics

Radiation Detection and Scintillator TechnologiesAdvanced Semiconductor Detectors and MaterialsAdvanced Energy Technologies and Civil Engineering Innovations

Identifiers

DOI
10.26565/2312-4334-2025-4-43

Citations and references

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