Article

Effect of Annealing Temperature on Energy Storage Performance of SrBi3.25La0.75Ti4O15 Thin Films

Yuying SongSchool of Science, Harbin University of Science and Technology, Harbin 150080, ChinaWenfeng YueSchool of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaFu HuangSchool of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaYuqun DengSchool of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaYongjiang ZhangSchool of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaJunyu MingSchool of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaFayaz HussainDepartment of Materials Engineering, NED University of Engineering & Technology, Karachi 75270, PakistanAdil Ahmed AlshoaibiDepartment of Physics, College of Science, King Faisal University, Al-Ahsa 31982, Saudi ArabiaG. AbdurakhmanovFaculty of Physics, The National University of Uzbekistan, Tashkent 100174, UzbekistanJunjun WangSchool of Science, Harbin University of Science and Technology, Harbin 150080, ChinaDawei WangSchool of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

Ceramicsjournal2026en

ABI

Abstract

Dielectric capacitors, characterized by ultra-fast charge/discharge speeds and high power densities, are widely used in modern electronic power systems. However, their low energy density and poor thermal stability limit applications. In this study, SrBi3.25La0.75Ti4O15 (SBLT) ferroelectric thin films were prepared by the sol–gel method. We systematically investigated the effect of annealing temperature on microstructural evolution, electrical properties, and energy storage performance. The SBLT film annealed at 700 °C exhibited optimal performance, achieving a balanced enhancement in polarization and breakdown strength, with an energy storage density of 48.66 J cm−3 and an efficiency of 78%. The material also demonstrated excellent thermal stability (30–175 °C) and frequency stability (0.1–100 kHz). These findings not only validate the potential of SBLT as a next-generation energy storage dielectric but also provide a practical solution for applications in semiconductor technology.

Topics

Dielectric materials and actuators Ferroelectric and Piezoelectric Materials High voltage insulation and dielectric phenomena

Identifiers

DOI: 10.3390/ceramics9020020

Citations and references

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