Effect of alpha particles on the electrophysical properties of silicon doped with palladium atoms
Sh. B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar St, 100057, Tashkent, UzbekistanDilmurod A. RakhmanovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar St, 100057, Tashkent, UzbekistanA. S. DoroshkevichJoint Institute for Nuclear Research, 141980, Dubna, RussiaZh. V. MezentsevaJoint Institute for Nuclear Research, 141980, Dubna, RussiaR.Sh. IsayevJoint Institute for Nuclear Research, 141980, Dubna, RussiaА. TatarinovaImmanuel Kant Baltic Federal University, Kaliningrad, 236041, Russia
2026en
ABI
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