Defect-mediated electrical relaxation and band-gap engineering in Zr-substituted MgCr2O4 spinel
Ghada RaddaouiFaculty of Sciences of Gabès, University of Gabès, Gabès 6072, TunisiaKarim SouifiFaculty of Sciences of Gabès, University of Gabès, Gabès 6072, TunisiaAbdullah Saad AlsubaieDepartment of Physics, Khurma University College, Taif University, Taif 21944, Saudi ArabiaElyor BerdimurodovFaculty of Chemistry, National University of Uzbekistan, Tashkent 100034, UzbekistanKhasan BerdimuradovDepartment of Pharmacy and Chemistry, Alfraganus University, Tashkent,100190, Uzbekistan
2026en
ABI
Abstract
No abstract available.