Thermal evaporation and characterization of superstrate CdS/Sb2Se3 solar cells
Miao LuoHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of ChinaMeiying LengHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of ChinaXinsheng LiuHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of ChinaJie ChenHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of ChinaChao ChenHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of ChinaSikai QinHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of ChinaJiang TangHuazhong University of Science and Technology 1 Wuhan National Laboratory for Optoelectronics (WNLO), , Wuhan, 430074 Hubei, People’s Republic of China
2014en
ABI
Abstract
Sb2Se3 is a very promising absorber material for thin film photovoltaics because of its ideal band gap, strong optical absorption, and non-toxic and earth-abundant constituents. However, only until this year Sb2Se3 solar cell was reported. Here, we present the fabrication and characterization of thermally evaporated superstrate CdS/Sb2Se3 solar cell. Our device achieved a power conversion efficiency of 1.9% (Voc = 300 mV, Jsc = 13.2 mA/cm2, and FF = 48%) and showed good stability. Moreover, using current-voltage measurement, admittance spectroscopy, capacitance-voltage profiling, and drive level capacitance profiling, device characteristics and performance limiting factors are revealed and discussed.
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