Non-Ideal p-n junction Diode of Sb[sub x]Se[sub 1−x] (x = 0.4, 0.5, 0.6, 0.7) Thin Films

Abstract

We have made diodes consisting of the same alloy i.e. SbxSe1−x (⁠x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p‐ to n‐type at x = 0.6 for SbxSe1−x. We have measured I‐V characteristics of four p‐n junction diodes i.e. p‐Sb2Se3/n‐Sb3Se2, p‐Sb2Se3/n‐Sb7Se3, p‐SbSe/n‐Sb3Se2, p‐SbSe/n‐Sb7Se3. From the I‐V plots we have calculated the parameters as built‐in voltage (Vbi), forward resistance (Rf), ideal factor (n), saturation current (Io), breakdown current (IBd) and breakdown voltage (VBd).

Identifiers

DOI

10.1063/1.3653616

Citations and references