Article

Characterization of Mg and Fe doped Sb2Se3 thin films for photovoltaic application

Yang LiHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaYing ZhouHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaYining ZhuHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaChao ChenHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaJiajun LuoHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaJingyuan MaChinese Academy of Sciences 3 Beijing Institute of Chemistry, , Beijing 100190, People's Republic of ChinaBo YangHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaXiaojie WangHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaZhe XiaHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of ChinaJiang TangHuazhong University of Science and Technology (HUST) 1 Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, , Wuhan 430074, People's Republic of China

2016en

ABI

Abstract

Sb2Se3 holds a great potential for low-cost thin film photovoltaics because of its very attractive material and optoelectronic properties, and the demonstrated 5.6% certified efficiency and decent device stability. A full understanding of the influence of external impurities on the properties of Sb2Se3 films would help the further improvement of Sb2Se3 solar cells. In this work, we carefully characterized the Mg and Fe doping in Sb2Se3 films. Both Kelvin probe force microscope and Hall measurements revealed that Mg was largely inert while Fe introduced the n-type doping. Temperature-dependent conductivity and admittance further demonstrated that Fe doping introduced two defect levels within the bandgap with their positions ∼0.3 eV and ∼0.4 eV below the conduction band. We caution that iron contamination should be minimized for high efficiency Sb2Se3 solar cells.

Identifiers

DOI: 10.1063/1.4971388

Citations and references

Cited by 20 references

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