Article

Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

Shengli ZhangInstitute of Optoelectronics & Nanomaterials Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 ChinaMeiqiu XieInstitute of Optoelectronics & Nanomaterials Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 ChinaFengyu LiDepartment of Chemistry Institute for Functional Nanomaterials University of Puerto Rico, Rio Piedras San Juan PR 00931 USAZhong YanInstitute of Optoelectronics & Nanomaterials Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 ChinaYafei LiCollege of Chemistry and Materials Science Jiangsu Key Laboratory of Biofunctional Materials Nanjing Normal University Nanjing 210023 ChinaErjun KanInstitute of Optoelectronics & Nanomaterials Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 ChinaWei LiuInstitute of Optoelectronics & Nanomaterials Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 ChinaZhongfang ChenDepartment of Chemistry Institute for Functional Nanomaterials University of Puerto Rico, Rio Piedras San Juan PR 00931 USAHaibo ZengInstitute of Optoelectronics & Nanomaterials Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

2015en

ABI

Abstract

Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two-dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm(2) V(-1) s(-1) . Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.

Identifiers

DOI: 10.1002/anie.201507568

Citations and references

Cited by 20 references

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