Metal–Oxide RRAM
H.-S. Philip WongDepartment of Electrical Engineering, University of Stanford, Stanford, CA, USAHeng-Yuan LeeNanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology and Research Institute, Hsinchu, TaiwanShimeng YuDepartment of Electrical Engineering, University of Stanford, Stanford, CA, USAYu-Sheng ChenInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanYi WuDepartment of Electrical Engineering, University of Stanford, Stanford, CA, USAPang-Shiu ChenDepartment of Chemical and Materials Engineering, Minghsin University of Science and Technology, Hsinchu, TaiwanByoungil LeeDepartment of Electrical Engineering, University of Stanford, Stanford, CA, USAFrederick T. ChenNanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology and Research Institute, Hsinchu, TaiwanMing‐Jinn TsaiNanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology and Research Institute, Hsinchu, Taiwan
2012en
ABI
Abstract
In this paper, recent progress of binary metal–oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal–oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.
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Cited by 40 references