Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Rainer WaserInstitut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)Regina DittmannInstitut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)G. StaikovInstitut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)K. SzotInstitut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
2009en
ABI
Abstract
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..
Identifiers
Citations and references
Cited by 40 references