Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices
Aize HaoState Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, ChinaShuai HeState Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, ChinaNi QinState Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, ChinaRuqi ChenState Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, ChinaDinghua BaoState Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
2017en
ABI
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Cited by 30 references