Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency

Abstract

A 12.6% Cu2ZnSnSxSe4–x (CZTSSe) solar cell is presented with detailed device characteristics. Both short-circuit current density (Jsc) and open circuit voltage (Voc) increase in the 12.6% champion, relative to previous devices, due to better bulk CZTSSe quality and improved optical architecture. The reduction in Voc deficit shows opportunities to push CZTSSe solar cells to higher efficiency.

Identifiers

DOI

10.1002/aenm.201301465

Citations and references