Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Vinod K. SangwanDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USADeep JariwalaDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAIn S. KimDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAKan-Sheng ChenDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USATobin J. Marks1] Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USALincoln J. LauhonDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAMark C. Hersam1] Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
2015en
ABI
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Cited by 20 references