Article

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

Ruijing GeMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesXiaohan WuMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesMyungsoo KimMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesJianping ShiDepartment of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, ChinaSushant SondeCenter for Nanoscale Materials, Argonne National Laboratory, 9700 Cass Avenue, Lemont, Illinois 60439, United StatesLi TaoMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesYanfeng ZhangDepartment of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, ChinaJack C. LeeMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesDeji AkinwandeMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States

2017en

ABI

Abstract

Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,6−9 inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage currents.10 Emerging device concepts in nonvolatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the wide 2D materials design space. A new major application, zero-static power radio frequency (RF) switching, is demonstrated with a monolayer switch operating to 50 GHz.

Identifiers

DOI: 10.1021/acs.nanolett.7b04342

Citations and references

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