Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
Ejaz Ahmad KheraDepartment of Physics, The Islamia University of Bahawalpur, PakistanHafeez UllahDepartment of Physics, The Islamia University of Bahawalpur, PakistanMuhammad ImranDepartment of Physics, Govt. College University Faisalabad, 38000, PakistanNiaz Ahmad NiazMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanFayyaz HussainMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanR.M. Arif KhalilMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanUmbreen RasheedMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanM. A. SattarDepartment of Physics, College of Science, United Arab Emirates University, Al Ain, United Arab EmiratesFasial IqbalDepartment of Physics, The Islamia University of Bahawalpur, PakistanChandreswar MahtaSchool of Electronics Engineering Chungbuk National University Cheongju 28644, South KoreaAnwar Manzoor RanaMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanSungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, South Korea
2020en
ABI
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