Resistivity and the Hall effect for thin MnSi_1.73films

Abstract

Electrical resistivity and Hall effect coefficient measurements have been made on MnSi1.73 thin films in the temperature range 100 to 850 K. The temperature dependence of resistivity shows the typical behaviour of a degenerate semiconductor. The energy gap calculated from resistivity and Hall effect data is about 0.45 and 0.42 eV, respectively. The sign of the Hall effect is positive throughout the whole measured temperature region, with an electron to hole mobility ratio less than unity. The hole concentration in the degenerate state was found to be 7.1*1020 cm-3.

Identifiers

DOI

10.1088/0022-3727/21/3/022

Citations and references