Article

Few-Layer MoS<sub>2</sub> with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

Dung-Sheng TsaiGraduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, TaiwanKeng‐Ku LiuInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, TaiwanDer‐Hsien LienGraduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, TaiwanMeng‐Lin TsaiGraduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, TaiwanChen-Fang KangGraduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, TaiwanChin-An LinGraduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, TaiwanLain‐Jong LiDepartment of Photonics, National Chiao Tung University, Hsinchu, TaiwanJr‐Hau HeGraduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

2013en

ABI

Abstract

Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.

Identifiers

DOI: 10.1021/nn305301b

Citations and references

Cited by 30 references

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