Article

Submonolayer films on a Si(111) surface under low-energy ion bombardment

S. J. NimatovTashkent State Technical University, Tashkent, 100095, UzbekistanД. С. Руми

Bulletin of the Russian Academy of Sciences Physicsjournal2014en

ABI

Abstract

The kinetics of deposition for monomolecular submonolayer films on a Si(111) surface is studied via low-energy electron diffraction with measurements of the intensities of diffraction reflection and the elastic background. The degree of structural perfection in growing films is estimated for alkali-metal silicides and silicon from low-energy beams. The optimum energy and dose intervals of silicide film formation are determined.

Topics

Ion-surface interactions and analysis Electron and X-Ray Spectroscopy Techniques Metal and Thin Film Mechanics

Identifiers

DOI: 10.3103/s1062873814060215

Citations and references

Cited by 60 references

Metrics — AkademScholar