Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing
Muhammad Faisal HayatDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanNaveed Ur RahmanDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanAziz UllahDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanNasir RahmanDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanMohammad SohailDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanShahid IqbalDepartment of Physics, University of Wisconsin, La Crosse, WI, USAAlamzeb KhanSchool of Medicine, Yale University, 333 Cedar Street, New Haven, CT, 06510, USASherzod AbdullaevNational University of UzbekistanKhaled AlthubeitiDepartment of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944, Taif, Saudi ArabiaSattam AlotaibiDepartment of Electrical Engineering, College of Engineering Taif University, P.O. Box11099, 21944, Taif, Saudi ArabiaSattam Al OtaibiDepartment of Physics, United Arab Emirates University, 15551, Al Ain, United Arab Emirates
ABI
Abstract
No abstract available.