Multiphonon Raman Spectrum of Silicon
Abstract
The energy and polarization characteristics of the one- and two-phonon Raman spectrum have been measured using a 180\ifmmode^\circ\else\textdegree\fi{} backscattering technique. The two-phonon spectrum was measured at 20, 80, and 305\ifmmode^\circ\else\textdegree\fi{}K. The one-phonon spectrum was measured at 17, 30, 80, and 305 \ifmmode^\circ\else\textdegree\fi{}K. The one-phonon line of symmetry ${\ensuremath{\Gamma}}_{25}$, was shown to be Lorentzian and to have a deconvoluted half-width at 17 \ifmmode^\circ\else\textdegree\fi{}K of 1.45 \ifmmode\pm\else\textpm\fi{} 0.05 ${\mathrm{cm}}^{\ensuremath{-}1}$. The two-phonon Raman spectrum was used to determine phonon energies at the four critical points $\ensuremath{\Gamma}$, $X$, $L$, and $W$.