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Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>M</mml:mi><mml:mrow><mml:mi>n</mml:mi><mml:mo>+</mml:mo><mml:mn>1</mml:mn></mml:mrow></mml:msub><mml:mi>A</mml:mi><mml:msub><mml:mi>X</mml:mi><mml:mi>n</mml:mi></mml:msub></mml:mrow></mml:math>phases

T. OuisseLaboratoire des Matériaux et du Génie Physique (LMGP), Unité Mixte de Recherche (UMR) du Centre National de la Recherche Scientifique (CNRS) 5628, Institut National Polytechnique de Grenoble (INPG), Minatec, 3, parvis Louis Néel, 38016 Grenoble, FranceLu ShiInstitut de la Matière Condensée et des Nanosciences, NAnoscopic PhySics (IMCN/NAPS), Université Catholique de Louvain, 2 Chemin du Cyclotron, 1348 Louvain-la-Neuve, BelgiumB. A. PiotLaboratoire National des Champ Magnétiques Intenses (LNCMI), Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier (UJF), Institut National des Sciences Appliquées (INSA), European Magnetic Field Laboratory (EMFL), 25, rue des Martyrs, 38042, Grenoble, FranceB. HackensInstitut de la Matière Condensée et des Nanosciences, NAnoscopic PhySics (IMCN/NAPS), Université Catholique de Louvain, 2 Chemin du Cyclotron, 1348 Louvain-la-Neuve, BelgiumVincent MauchampInstitut PprimeDidier ChaussendeLaboratoire des Matériaux et du Génie Physique (LMGP), Unité Mixte de Recherche (UMR) du Centre National de la Recherche Scientifique (CNRS) 5628, Institut National Polytechnique de Grenoble (INPG), Minatec, 3, parvis Louis Néel, 38016 Grenoble, France
2015lv
ABI

Abstract

We propose a general, yet simple model for describing the weak field magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals. We modify this model so as to apply it to the magnetotransport properties of the ${M}_{n+1}A{X}_{n}$ phases, a particular class of nanolamellar carbides and nitrides. We argue that the values of the in-plane Hall coefficient and the in-plane parabolic magnetoresistance are due to the specific shape of the Fermi surface of almost two-dimensional hole and electron bands. If the contribution of the electron pockets to in-plane resistivity is often (but not always) predicted to be a minor one, in contrast, both holes and electrons should substantially contribute to the overall value of the in-plane Hall coefficient. The relevance of our model is supported by elementary considerations and a set of experimental data obtained from single crystals of ${\mathrm{V}}_{2}\mathrm{AlC}$ and $\mathrm{C}{\mathrm{r}}_{2}\mathrm{AlC}$. In particular, we obtain a high ratio between the in-plane $({\ensuremath{\rho}}_{ab})$ and parallel to the $c$ axis $({\ensuremath{\rho}}_{c})$ resistivities.

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