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Novel silicon allotropes: Stability, mechanical, and electronic properties

Qingyang FanXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaChangchun ChaiXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaQun WeiXidian University 2 School of Physics and Optoelectronic Engineering, , Xi'an 710071, People's Republic of ChinaHaiyan YanBaoji University of Arts and Sciences 3 College of Chemistry and Chemical Engineering, , Baoji 721013, People's Republic of ChinaYingbo ZhaoXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaYintang YangXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaXinhai YuXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaYang LiuXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaMengjiang XingKunming University of Science and Technology 4 Faculty of Information Engineering and Automation, , Kunming 650051, People's Republic of ChinaJunqin ZhangXidian University 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, , Xi'an 710071, People's Republic of ChinaRonghui YaoXidian University 2 School of Physics and Optoelectronic Engineering, , Xi'an 710071, People's Republic of China
2015en
ABI

Abstract

One quasi-direct gap phase (Amm2) and three indirect gap phases (C2/m-16, C2/m-20, and I-4) of silicon allotropes are proposed. The detailed theoretical study on the structure, density of states, elastic properties, sound velocities, and Debye temperature of these four phases is carried out by using first principles calculations. The elastic constants of these four phases are calculated by strain-stress method. The elastic constants and the phonon calculations manifest all novel silicon allotropes in this paper are mechanically and dynamically stable at ambient condition. The B/G values indicate that these four phases of silicon are brittle materials at ambient pressure. The anisotropy properties show that C2/m-20 phase exhibits a larger anisotropy in its elastic modulus, shear elastic anisotropic factors, and several anisotropic indices than others. We have found that the Debye temperature of the four novel silicon allotropes gradually reduces in the order of C2/m-20 > Amm2 > C2/m-16 > I-4 at ambient pressure.

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