Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
T. DaliborInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraße 7, D-91058 Erlangen, GermanyGerhard PenslInstitute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraße 7, D-91058 Erlangen, GermanyH. MatsunamiDepartment of Electrical Engineering, Kyoto University, Kyoto 606-01, JapanTsunenobu KimotoDepartment of Electrical Engineering, Kyoto University, Kyoto 606-01, JapanW. J. ChoykeDepartment of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260 USAAdolf SchönerIndustrial Microelectronics Center (imc), P.O. Box 1084, S-16421 Kista, Stockholm, SwedenN. NordellIndustrial Microelectronics Center (imc), P.O. Box 1084, S-16421 Kista, Stockholm, Sweden
1997en
ABI
Abstract
Electrical data obtained from deep level transient spectroscopy investigations on deep defect centers in the 3C, 4H, and 6H SiC polytypes are reviewed. Emphasis is put on intrinsic defect centers observed in as-grown material and subsequent to ion implantation or electron irradiation as well as on defect centers caused by doping with or implantation of transition metals (vanadium, titanium, chromium, and scandium).
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