Modification of semiconductors with proton beams. A review
В. В. КозловскийIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaВ. А. КозловSt. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, RussiaV. N. LomasovIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
2000en
ABI
Abstract
Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is shown to have high potential in monitoring the properties of semiconductor materials and designing devices of micro and nano electronics as compared to the conventional doping techniques such as thermal diffusion, epitaxy, and ion implantation.
Identifiers
Citations and references
Cited by 30 references