Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
Jeff B. CasadyNASA Center for Commercial Development, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201, U.S.AWayne JohnsonNASA Center for Commercial Development, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201, U.S.A
1996en
ABI
Abstract
No abstract available.
Identifiers
Citations and references
Cited by 40 references