Enhancing thermoelectric performance of FeNbSb half-Heusler compound by Hf-Ti dual-doping
Jiajun ShenState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaChenguang FuState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaYintu LiuState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaXinbing ZhaoState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaTiejun ZhuState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2017en
ABI
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Cited by 20 references