Electronic properties of two-dimensional systems
Tsuneya AndoInstitute of Applied Physics, University of Tsukuba, Sakura, Ibaraki 305, Japan and IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598A. B. FowlerInstitute of Applied Physics, University of Tsukuba, Sakura, Ibaraki 305, Japan and IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598Frank SternInstitute of Applied Physics, University of Tsukuba, Sakura, Ibaraki 305, Japan and IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598
1982en
ABI
Abstract
The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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