Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps
Yu. A. BerashevichBelarussian State University of Information Science and Radio Engineering, ul. Brovki 17, Minsk, 220013, BelarusA. L. DanilyukBelarussian State University of Information Science and Radio Engineering, ul. Brovki 17, Minsk, 220013, BelarusA. N. KholodBelarussian State University of Information Science and Radio Engineering, ul. Brovki 17, Minsk, 220013, BelarusВ. Е. БорисенкоBelarussian State University of Information Science and Radio Engineering, ul. Brovki 17, Minsk, 220013, Belarus
2001en
ABI
Abstract
A model is proposed for carrier transport in Si/CaF2 nanometer periodic structures with the participation of traps in insulators. Simulation of the current-voltage characteristics of such structures showed that trap participation enhances the total carrier transport by 2–3 orders of magnitude and causes nonmonotonicity of current-voltage characteristics. The carrier transport depends on the energy level corresponding to traps, the number of states in a trap at the carrier trajectory, its deviation from a rectilinear one, insulator thickness, and potential barrier height.
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