Highly spin-polarized materials and devices for spintronics<sup>∗</sup>
Kōichirō InomataNational Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, JapanN. IkedaDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanNobuki TezukaDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanR. GotoDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanSatoshi SugimotoDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanM. WójcikInstitute of Physics, Polish Academy of Sciences, Warszawa 02-668, PolandE. JędrykaInstitute of Physics, Polish Academy of Sciences, Warszawa 02-668, Poland
2008en
ABI
Abstract
changes from parallel to antiparallel. The inverse TMR suggests the negative spin polarization of CFO, which is consistent with the band structure of CFO obtained by first principle calculation. The - 124% TMR corresponds to the spin filtering efficiency of 77% by the CFO barrier.
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