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Ultralow Thermal Conductivity in Full Heusler Semiconductors

Jiangang HeDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAMaximilian AmslerDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAYi XiaDepartment of Materials Science and Engineering, University of California, Los Angeles, California 90095, USAS. Shahab NaghaviDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAVinay I. HegdeDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAShiqiang HaoDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAStefan GoedeckerDepartment of Physics, Universität Basel, Klingelbergstrasse 82, 4056 Basel, SwitzerlandVidvuds OzoliņšDepartment of Materials Science and Engineering, University of California, Los Angeles, California 90095, USAChris WolvertonDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
2016en
ABI

Abstract

Semiconducting half and, to a lesser extent, full Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full Heusler compounds with ten valence electrons (X_{2}YZ, X=Ca, Sr, and Ba; Y=Au and Hg; Z=Sn, Pb, As, Sb, and Bi) through high-throughput ab initio screening. These new compounds exhibit ultralow lattice thermal conductivity κ_{L} close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials.

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