Ultrasound-induced surface hardening of dislocation-free silicon
Igor OstrovskiiDepartment of Physics, Kiev State University, Kiev, 252022, UkraineL. P. SteblenkoDepartment of Physics, Kiev State University, Kiev, 252022, UkraineА. B. NadtochiiDepartment of Physics, Kiev State University, Kiev, 252022, Ukraine
2000en
ABI
Abstract
The effect of ultrasonic treatment on the microplastic properties of a near-surface layer in dislocation-free silicon single crystals was studied using [111]-oriented p-Si samples with artificial dislocation rosettes. The ultrasonic processing resulted in the formation of an approximately 100-µm-thick hardened near-surface layer and the emergence of point-defect pileups of the vacancy and/or vacancy-impurity cluster type on the sample surface. Possible mechanisms of the observed phenomena are discussed.
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