Silicon Carbide as a Platform for Power Electronics
C. R. EddyU.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USAD. Kurt GaskillU.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA
2009en
ABI
Abstract
Methods for growing large, defect-free silicon carbide crystals have enabled the fabrication of devices that can operate at high power.
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Cited by 20 references