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Constructing heterojunctions by surface sulfidation for efficient inverted perovskite solar cells

Xiaodong LiSchool of Physics and Electronic Science, Engineering Research Center of Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, ChinaWenxiao ZhangSchool of Physics and Electronic Science, Engineering Research Center of Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, ChinaXuemin GuoSchool of Physics and Electronic Science, Engineering Research Center of Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, ChinaChunyan LuSchool of Physics and Electronic Science, Engineering Research Center of Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, ChinaJiyao WeiSchool of Physics and Electronic Science, Engineering Research Center of Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, ChinaJunfeng FangNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
2022en
ABI

Abstract

A stable perovskite heterojunction was constructed for inverted solar cells through surface sulfidation of lead (Pb)-rich perovskite films. The formed lead-sulfur (Pb-S) bonds upshifted the Fermi level at the perovskite interface and induced an extra back-surface field for electron extraction. The resulting inverted devices exhibited a power conversion efficiency (PCE) >24% with a high open-circuit voltage of 1.19 volts, corresponding to a low voltage loss of 0.36 volts. The strong Pb-S bonds could stabilize perovskite heterojunctions and strengthen underlying perovskite structures that have a similar crystal lattice. Devices with surface sulfidation retained more than 90% of the initial PCE after aging at 85°C for 2200 hours or operating at the maximum power point under continuous illumination for 1000 hours at 55° ± 5°C.

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