A mechanism for two-electron capture at deep level defects in semiconductors
N. T. BagraevA.F. Ioffe Physico-Technical Institute, Leningrad, 194021, USSRV. A. MashkovA.F. Ioffe Physico-Technical Institute, Leningrad, 194021, USSR
1988en
ABI
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Cited by 20 references