Photoconductivity of silicon with nanoclusters of manganese atoms
М. К. БахадырхановTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanK. S. AyupovTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanG. Kh. MavlyanovTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanХ. М. ИлиевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanС. Б. ИсамовTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan
ABI
Abstract
In this work, specific features of photoconductivity of silicon with multicharge nanoclusters of manganese atoms are investigated. It is shown that for such samples, anomalously high impurity photoconductivity is observed in the spectral region λ = 1.8–3 μm. It is also shown that such samples possess giant residual photoconductivity.