Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

Abstract

Methods of electron spectroscopy, low-energy electron diffraction, Auger spectroscopy, elastically scattered electron spectroscopy, and photoelectron spectroscopy are used to study the chemical composition and the band structure of a Si(111) surface. Single-crystal layers of metal silicides, whose secondary-emission properties are superior to the properties of Si, are formed on the Si surface after the ion implantation of B, P, and Ba ions and ions of alkali metals and the subsequent annealing of the ion-implanted layers.

Identifiers

DOI

10.1134/s1064226907080104

Citations and references