Energy levels of vacancies and interstitial atoms in the band gap of silicon

Abstract

Based on the analysis of the secondary processes of radiation-induced defect formation in Si crystals with charge-dependent selective traps for vacancies and interstitial atoms, the energy levels of vacancies and interstitial atoms were identified; these level were determined previously from the effect of the irradiation conditions on the annihilation rate of elementary primary defects. It is ascertained that the levels at ∼E c -0.28 eV and at ∼E c -0.65 eV in the band gap of Si belong, most likely, to vacancies; the levels at ∼E c -0.44 eV, at ∼E c -0.86 eV, and, presumably, at ∼E c -0.67 eV belong to intrinsic interstitial atoms.

Identifiers

DOI

10.1134/1.1568459

Citations and references