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Work: Homogeneous 2D MoTe<sub>2</sub> p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

  1. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

    Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

    Article2D Materials and ApplicationsPhysica B Condensed Matter20232 citations
    ABI

  2. Single flake homo p–n diode of MoTe <sub>2</sub> enabled by oxygen plasma doping

    Irsa Zulfiqar, Sania Gul, Hafiz Aamir Sohail +9

    Article2D Materials and ApplicationsNanotechnology Reviews20241 citations
    ABI