Oxygen-containing radiation defects in Si1−xGex
Yu.V. PomozovInstitute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 258650, UkraineMikhail G. SosninInstitute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 258650, UkraineLyudmila I. KhirunenkoInstitute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 258650, UkraineV.I. YashnikInstitute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 258650, UkraineН.В. АбросимовInstitute of Crystal Growth, D-12489, Berlin, GermanyWolfgang P. SchröderInstitute of Crystal Growth, D-12489, Berlin, GermanyM. HöhneInstitute of Crystal Growth, D-12489, Berlin, Germany
2000en
ABI
Abstract
The processes of formation and annealing of radiation defects in Si1−x Gex samples irradiated with 4-MeV electrons were studied. It is shown that, in the range of Ge contents of 3.5–15 at. %, a reduction in the efficiency of formation of oxygen-containing defects (VO and VO2) compared to that in silicon is observed. The existence of three types of VO centers, perturbed and unperturbed by neighboring Ge atoms, is detected in Si1−x Gex.
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