Crystal growth of manganese silicide, MnSi?1.73 and semiconducting properties of Mn15Si26
Iwao KawasumiDepartment of Instrumentation, Faculty of Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, 223, Yokohama, JapanMakoto SakataDepartment of Instrumentation, Faculty of Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, 223, Yokohama, JapanIsao NishidaNational Research Institute for Metals, 2-3-12, Nakameguro, Meguro-ku, 153, Tokyo, JapanK. MasumotoNational Research Institute for Metals, 2-3-12, Nakameguro, Meguro-ku, 153, Tokyo, Japan
1981en
ABI
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