Very heavily electron-doped CrSi₂as a high-performance high-temperature thermoelectric material

Abstract

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi2 and find that at temperatures of 900–1250 K and electron dopings of 1–4 × 1021 cm−3, thermopowers as large in magnitude as 200 μV K−1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping.

Identifiers

DOI

10.1088/1367-2630/14/3/033045

Citations and references