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Thermoelectric properties of bismuth telluride synthesized by electrochemical deposition method

Roman GolubevPeter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg 195251, RussiaRoman BuslaevPeter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg 195251, RussiaEvgeniy BakulinJSC “Avangard”, Saint Petersburg, 195271, RussiaSergey DzyubanenkoJSC “Avangard”, Saint Petersburg, 195271, Russia
2019en
ABI

Abstract

Abstract The paper presents the study of thermoelectric properties of bismuth tellurides obtained by the method of electrochemical deposition. Measurements of electrical conductivity and the Seebeck coefficient were carried out on a NETZCH SBA 458 Nemesis® measuring installation. Based on the obtained measurements, the following conclusions were made: for samples synthesized by the method of continuous electrochemical deposition, the maximum value of the Seebeck coefficient reached α = 14 μV / K, while for samples obtained by the pulse method α = 47 μV / K. It was also noted that after annealing, the samples showed an increase in the Seebeck coefficient up to 1.5 times. As a result of analyzing the measured thermoelectric characteristics, it was concluded that the method of pulsed electrochemical deposition is more efficient for obtaining high-quality thermoelectric materials.

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