Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy
В. А. ВолодинNovosibirsk State University Pirogova Street, 2 Novosibirsk 630090 RussiaD. I. KoshelevNovosibirsk State University Pirogova Street, 2 Novosibirsk 630090 Russia
2013en
ABI
Abstract
Hydrogenated amorphous silicon (a‐Si:H) films were studied using infrared and Raman spectroscopy. We have experimentally found that ratios of Raman scattering cross‐sections for Si–H to Si–Si bonds and for Si–H 2 to Si–Si bonds are equal to 0.65 ± 0.07 and 0.25 ± 0.03, respectively. It allows to measure the concentration of hydrogen in a‐Si:H films. The developed approach can be applied for in situ control of hydrogen in a‐Si:H films and also suitable for thin a‐Si:H films on substrates that are opaque in infrared spectral region. Copyright © 2013 John Wiley & Sons, Ltd.
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