Multilayer nanostructures based on porous silicon for optoelectronics
Н. В. ЛатухинаSemiconductor Micro-and Nanoelectronics, SamaraD. A. LizunkovaSemiconductor Micro-and Nanoelectronics, SamaraG. A. RogozhinaSamara University, Department of Radiophysics,I. M. ZhiltsovInstitute for Physics of Microstructures RAS, Nizhny NovgorodM. V. StepykhovaSemiconductor Micro-and Nanoelectronics, SamaraV. I. ChepurnovSamara University, Department of Radiophysics,
2018en
ABI
Abstract
Experimental evaluation of the ability to use structures based on porous silicon for solar cells and LEDs is performed. Spectral characteristics of photosensitivity of the structures with an upper layer of porous silicon and porous silicon carbide (nSiC / p-porSi heterostructures) are studied, as well as photoluminescence spectra of structures with porous silicon doped with erbium (porSi : Er structures).
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Cited by 30 references