On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors
Zhengli HanMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USAVivek SinghMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USADerek KitaMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USACorentin MonmeyranMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USAP. BeclaMassachusetts Institute of Technology 2 Materials Processing Center, , Cambridge, Massachusetts 02139, USAPeter SuMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USAJ. LiChongqing University 3 The Key Laboratory of Optoelectronic Technology and System, Education Ministry of China, , Chongqing 400044, ChinaX. HuangTianjin University 4 School of Precision Instruments and Optoelectronics Engineering, , Tianjin 300072, ChinaLionel C. KimerlingMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USAJuejun HuMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USAKathleen RichardsonUniversity of Central Florida 5 CREOL, The College of Optics and Photonics, , Orlando, Florida 32816, USADawn T. H. TanSingapore University of Technology and Design 6 Photonics Devices and Systems Group, , Singapore 487372, SingaporeAnu AgarwalMassachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA
2016en
ABI
Abstract
We experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.
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Cited by 30 references